Lalinsky´, T.: search on Z-Library

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1

SPIE Proceedings [SPIE SPIE Microtechnologies - Barcelona, Spain (Monday 4 May 2015)] Smart Sensors, Actuators, and MEMS VII; and Cyber Physical Systems - Laser ablation for membrane processing of AlGaN/GaN- and micro structured ferroelectric thin film MEMS and SiC pressure sensors for extreme conditions

Sánchez-Rojas, José Luis, Brama, Riccardo, Zehetner, J., Vanko, G., Dzuba, J., Ryger, I., Lalinsky, T., Benkler, Manuel, Lucki, Michal

Year:

2015

Language:

english

File:

PDF, 1.22 MB

english, 2015

2

The improved performance of GaAs micromachined power sensor microsystem

T Lalinský, Š Haščı́k, Ž Mozolová, E Burian, M Držı́k

Journal:

Sensors and Actuators A: Physical

Year:

1999

Language:

english

File:

PDF, 690 KB

english, 1999

3

Impact of ZnO gate interfacial layer on piezoelectric response of AlGaN/GaN C-HEMT based ring gate capacitor

T. Lalinský, G. Vanko, M. Vallo, M. Držík, J. Bruncko, J. Jakovenko, V. Kutiš, I. Rýger, Š. Haščík, M. Husák

Journal:

Sensors and Actuators A: Physical

Year:

2011

Language:

english

File:

PDF, 818 KB

english, 2011

4

Optimization and performance of Al2O3/GaN metal–oxide–semiconductor structures

K. Čičo, J. Kuzmík, D. Gregušová, R. Stoklas, T. Lalinský, A. Georgakilas, D. Pogany, K. Fröhlich

Journal:

Microelectronics Reliability

Year:

2007

Language:

english

File:

PDF, 251 KB

english, 2007

5

Thermal simulation and characterization of gaas micromachined power-sensor microsystems

E. Burian, D. Pogany, T. Lalinský, N. Seliger, E. Gornik

Journal:

Sensors and Actuators A: Physical

Year:

1998

Language:

english

File:

PDF, 634 KB

english, 1998

6

[IEEE 2008 International Conference on Advanced Semiconductor Devices and Microsystems (ASDAM) - Smolenice, Slovakia (2008.10.12-2008.10.16)] 2008 International Conference on Advanced Semiconductor Devices and Microsystems - Preparation and properties of micro-hotplates for gas sensors based on GaAs

Tengeri, D., Pullmannova, A., Hotovy, I., Rehacek, V., Hascik, S., Lalinsky, T.

Year:

2008

Language:

english

File:

PDF, 1.73 MB

english, 2008

7

Barrier height enhancement in WSix/GaAs Schottky diodes by rapid thermal annealing

J. Osvald, T. Lalinský

Journal:

Journal of Materials Science: Materials in Electronics

Year:

1993

Language:

english

File:

PDF, 376 KB

english, 1993

8

Impact of SF6 plasma treatment on performance of AlGaN/GaN HEMT

G. Vanko, T. Lalinský, Š. Haščík, I. Rýger, Ž. Mozolová, J. Škriniarová, M. Tomáška, I. Kostič, A. Vincze

Journal:

Year:

2009

Language:

english

File:

PDF, 298 KB

english, 2009

9

Surface acoustic wave excitation on SF6 plasma-treated AlGaN/GaN heterostructure

T. Lalinský, I. Rýger, L. Rufer, G. Vanko, Š. Haščík, Ž. Mozolová, M. Tomáška, A. Vincze, F. Uherek

Journal:

Year:

2009

Language:

english

File:

PDF, 324 KB

english, 2009

10

AlGaN/GaN C-HEMT structures for dynamic stress detection

Gabriel Vanko, Milan Držík, Martin Vallo, Tibor Lalinský, Vladimír Kutiš, Stanislav Stančík, Ivan Rýger, Anna Benčurová

Journal:

Sensors and Actuators A: Physical

Year:

2011

Language:

english

File:

PDF, 651 KB

english, 2011

11

GaAs based micromachined thermal converter for gas sensors

T. Lalinský, M. Držík, J. Jakovenko, G. Vanko, Ž. Mozolová, Š. Haščík, J. Chlpík, I. Hotový, V. Řeháček, I. Kostič, L. Matay, M. Husák

Journal:

Sensors and Actuators A: Physical

Year:

2008

Language:

english

File:

PDF, 696 KB

english, 2008

12

A three layer model of planar alloyed ohmic contacts to n-GaAs

M. Porges, T. Lalinský, Ẑ Mozolová, J. Kuzmík

Journal:

Solid-State Electronics

Year:

1990

Language:

english

File:

PDF, 574 KB

english, 1990

13

SPIE Proceedings [SPIE SPIE Microtechnologies - Grenoble, France (Wednesday 24 April 2013)] Smart Sensors, Actuators, and MEMS VI - MEMS pressure sensor fabricated by advanced bulk micromachining techniques

Vanko, Gabriel, Hudek, Peter, Zehetner, Johann, Dzuba, Jaroslav, Choleva, Pavlina, Vallo, Martin, Rýger, Ivan, Lalinský, Tibor, Schmid, Ulrich, Sánchez de Rojas Aldavero, José Luis, Leester-Schaedel,

Year:

2013

Language:

english

File:

PDF, 450 KB

english, 2013

14

Gallium arsenide suspended microheater for MEMS sensor arrays

I. Hotovy, V. Rehacek, F. Mika, T. Lalinsky, S. Hascik, G. Vanko, M. Drzik

Journal:

Microsystem Technologies

Year:

2008

Language:

english

File:

PDF, 458 KB

english, 2008

15

Design and simulation of micromechanical thermal converter for RF power sensor microsystem

Jiri Jakovenko, Miroslav Husak, Tibor Lalinsky

Journal:

Microelectronics Reliability

Year:

2004

Language:

english

File:

PDF, 532 KB

english, 2004

16

[IEEE Microsystems (ASDAM) - Smolenice, Slovakia (2010.10.25-2010.10.27)] The Eighth International Conference on Advanced Semiconductor Devices and Microsystems - Investigation of deep energy levels in heterostructures based on GaN by DLTS

Stuchlikova, L., Sebok, J., Rybar, J., Petrus, M., Nemec, M., Harmatha, L., Benkovska, J., Kovac, J., Skriniarova, J., Lalinsky, T., Paskiewicz, R., Tlaczala, M.

Year:

2010

Language:

english

File:

PDF, 153 KB

english, 2010

17

C–V analysis of rapidly thermal annealed SF6 plasma treated AlGaN/GaN heterostructures

J. Osvald, T. Lalinský, G. Vanko, Š. Haščík, A. Vincze

Journal:

Applied Surface Science

Year:

2010

Language:

english

File:

PDF, 296 KB

english, 2010

18

The effect of oxygen in WNxfilms on thermal stability of WNx/GaAs interfaces

D. Gregušová, T. Lalinský, ž. Mozolová, J. Breza, P. Vogrinčič

Journal:

Journal of Materials Science: Materials in Electronics

Year:

1993

Language:

english

File:

PDF, 262 KB

english, 1993

19

Properties of WNx/GaAs Schottky contacts prepared by ion implantation of nitrogen

T. Lalinsky, J. Kuzmík, D. Gregušová, Ž. Mozolová, J. Breza, M. Feciško, P. Seidl

Journal:

Journal of Materials Science: Materials in Electronics

Year:

1992

Language:

english

File:

PDF, 435 KB

english, 1992

20

Effect of bias conditions on pressure sensors based on AlGaN/GaN High Electron Mobility Transistor

Le Boulbar, E.D., Edwards, M.J., Vittoz, S., Vanko, G., Brinkfeldt, K., Rufer, L., Johander, P., Lalinský, T., Bowen, C.R., Allsopp, D.W.E.

Journal:

Sensors and Actuators A: Physical

Year:

2013

Language:

english

File:

PDF, 621 KB

english, 2013

21

[IEEE 2016 11th International Conference on Advanced Semiconductor Devices & Microsystems (ASDAM) - Smolenice, Slovakia (2016.11.13-2016.11.16)] 2016 11th International Conference on Advanced Semiconductor Devices & Microsystems (ASDAM) - Schottky contact metallization stability on AlGaN/GaN heterostructure during the diamond deposition process

Babchenko, O., Vanko, G., Dzuba, J., Izak, T., Vojs, M., Lalinsky, T., Kromka, A.

Year:

2016

File:

PDF, 400 KB

2016

22

Characterization of WNx metallization prepared by ion implantation of nitrogen

D Gregušová, T Lalinský, Ž Mozolová, D Machajdik, I Pochaba, I Vavra, M Porges

Journal:

Thin Solid Films

Year:

1994

Language:

english

File:

PDF, 707 KB

english, 1994

23

On the relationship between charge- and current-based DLTS

I. Thurzo, T. Lalinský

Journal:

physica status solidi (a)

Year:

1982

Language:

english

File:

PDF, 176 KB

english, 1982

24

Electrical field mapping in InGaP HEMTs and GaAs terahertz emitters using backside infrared OBIC technique.

D. Pogany, J. Kuzmik, J. Darmo, M. Litzenberger, S. Bychikhin, K. Unterrainer, Z. Mozolova, S. Hascik, T. Lalinsky, E. Gornik

Journal:

Microelectronics Reliability

Year:

2002

File:

PDF, 946 KB

2002

25

Performance of GaAs micromachined microactuator

T. Lalinský, E. Burian, M. Drz̆ı́k, Š. Hašc̆ı́k, Z̆. Mozolová, J. Kuzmı́k, Z. Hatzopoulos

Journal:

Sensors and Actuators A: Physical

Year:

2000

Language:

english

File:

PDF, 231 KB

english, 2000

26

Thermo-mechanical characterization of micromachined GaAs-based thermal converter using contactless optical methods

T. Lalinský, M. Držík, J. Chlpík, M. Krnáč, Š. Haščík, Ž. Mozolová, I. Kostič

Journal:

Sensors and Actuators A: Physical

Year:

2005

Language:

english

File:

PDF, 344 KB

english, 2005

27

Manufacturing of membranes by laser ablation in SiC, sapphire, glass and ceramic for GaN/ferroelectric thin film MEMS and pressure sensors

Zehetner, J., Kraus, S., Lucki, M., Vanko, G., Dzuba, J., Lalinsky, T.

Journal:

Microsystem Technologies

Year:

2016

Language:

english

File:

PDF, 1.76 MB

english, 2016

28

Firm Competitiveness Determinants: Results of a Panel Data Analysis

Lalinsky, Tibor

Journal:

SSRN Electronic Journal

Year:

2013

Language:

english

File:

PDF, 527 KB

english, 2013

29

T-shaped gates for heterostructure field effect transistors

T. Lalinský, J. Škriniarová, I. Kostič, A. Hart van der, P. Hrkút, Š. Haščı&amp, #x0301, k, L. Matay, Ž. Mozolová, P. Kordoš

Journal:

Year:

2001

Language:

english

File:

PDF, 217 KB

english, 2001

30

The PHOTOFET method in submicrometre GaAs MESFETS: substrate leakage current effect

Papaioannou, G J, Ioannou-Sougleridis, V, Lalinski, T, Kuzmik, J, Porges, M, Kourkoutas, C D

Journal:

Semiconductor Science and Technology

Year:

1992

Language:

english

File:

PDF, 360 KB

english, 1992

31

d.c. Performance of short-channel ion-implanted GaAs MESFETs (The role of gate length shortening)

J. Kuzmik, T. Lalinský, Z. Mozolova, M. Porges

Journal:

Solid-State Electronics

Year:

1990

Language:

english

File:

PDF, 403 KB

english, 1990

32

Reactively sputtered NbN Schottky contacts on GaAs and their thermal stability

I Hotový, J Huran, b Š Haščíkb, T Lalinský

Journal:

Year:

1998

Language:

english

File:

PDF, 299 KB

english, 1998

33

[IEEE 2012 International Conference on Advanced Semiconductor Devices & Microsystems (ASDAM) - Smolenice, Slovakia (2012.11.11-2012.11.15)] The Ninth International Conference on Advanced Semiconductor Devices and Mircosystems - Conductive metal oxide based gates for self-aligned technology of AlGaN/GaN HEMTs

Vanko, G., Vallo, M., Ryger, I., Dzuba, J., Lalinsky, T.

Year:

2012

Language:

english

File:

PDF, 187 KB

english, 2012

34

[IEEE The Fifth International Conference on Advanced Semiconductor Devices and Microsystems, 2004. ASDAM 2004. - Smolenice Castle, Slovakia (Oct. 17-21, 2004)] The Fifth International Conference on Advanced Semiconductor Devices and Microsystems, 2004. ASDAM 2004. - 2-D thermo-mechanical simulation of the membrane MEMS components

Chlpik, J., Drzik, M., Lalinsky, T.

Year:

2004

Language:

english

File:

PDF, 873 KB

english, 2004

35

GAGG:ce single crystalline films: New perspective scintillators for electron detection in SEM

Bok, Jan, Lalinský, Ondřej, Hanuš, Martin, Onderišinová, Zuzana, Kelar, Jakub, Kučera, Miroslav

Journal:

Ultramicroscopy

Year:

2016

Language:

english

File:

PDF, 754 KB

english, 2016

36

MICROMECHANICAL THERMAL CONVERTER DEVICE BASED ON POLYIMIDE-FIXED ISLAND STRUCTURE

LALINSKÝ, T., KRNÁČ, M., HAŠČÍK, Š., MOZOLOVÁ, Ž., MATAY, L., KOSTIČ, I., HRKÚT, P., JAKOVENKO, J., HUSÁK, M.

Journal:

International Journal of Computational Engineering Science

Year:

2003

Language:

english

File:

PDF, 407 KB

english, 2003

37

Mechanically fixed and thermally insulated micromechanical structures for GaAs heterostructure based MEMS devices

Lalinsky´, T., Haščík, Sˇ., Mozolová, Ž., Burian, E., Krnáč, M., Tomáška, M., Škriniarová, J., Drzˇík, M., Kosticˇ, I., Matay, L.

Journal:

Microelectronics International

Year:

2003

Language:

english

File:

PDF, 246 KB

english, 2003

38

Short article

Cares, Kristen, Al-Ansari, Namir, Macha, Suhasini, Zoubi, Najeeb, Zaghloul, Hazim, Thomas, Ron, Lalinsky, Patricia, El-Baba, Mohammad

Journal:

European Journal of Gastroenterology & Hepatology

Year:

2017

Language:

english

File:

PDF, 117 KB

english, 2017

39

Some peculiarities at preparation of Bi 4 Ti 3 O 12 films for bolometric applications

Chromik, Š., Španková, M., Talacko, M., Dobročka, E., Lalinský, T.

Journal:

Applied Surface Science

Year:

2018

Language:

english

File:

PDF, 2.33 MB

english, 2018

40

Bulk micromachining of SiC substrate for MEMS sensor applications

Vanko, Gabriel, Hudek, Peter, Zehetner, Johann, Dzuba, Jaroslav, Choleva, Pavlina, Kutiš, Vladimír, Vallo, Martin, Rýger, Ivan, Lalinský, Tibor

Journal:

Microelectronic Engineering

Year:

2013

Language:

english

File:

PDF, 765 KB

english, 2013

41

InGaAs/InGaP HEMTs: technological optimization and analytical modelling

J. Kuzmı&amp, #x0301, k, S. Hasenöhrl, R. Kúdela, Š. Haščı&amp, #x0301, k, Ž. Mozolová, T. Lalinský, P. Vogrinčič, J. Breza, J. Škriniarová, A. Fox, P. Kordoš

Journal:

Year:

2001

Language:

english

File:

PDF, 112 KB

english, 2001

42

Laser ablated ZnO layers for ALGaN/GaN HEMT passivation

G. Vanko, M. Vallo, J. Bruncko, T. Lalinský

Journal:

Year:

2012

Language:

english

File:

PDF, 457 KB

english, 2012

43

[IEEE International Conference on Advanced Semiconductor Devices and Microsystems (ASDAM) - Smolenice, Slovakia (16-18 Oct. 2000)] ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386) - Poly Si/Ni(Pt) thin film resistance temperature sensors on GaAs

Lalinsky, T., Hrkut, P., Mozolova, Z., Kovacik, T.

Year:

2000

Language:

english

File:

PDF, 220 KB

english, 2000

44

The GaN/SiC Heterostructure-based Hydrogen SAW Sensor Operating in GHz Range

Rýger, I., Vanko, G., Lalinský, T., Haščík, Š., Nemec, P., Benčúrová, A., Tomáška, M.

Journal:

Procedia Engineering

Year:

2014

Language:

english

File:

PDF, 1.01 MB

english, 2014

45

Ohmic contacts to p-GaN Using Au/Ni-Mg-O Metallization

Liday, Jozef, Vogrinčič, Peter, Hotový, Ivan, Bonanni, Alberta, Sitter, Helmut, Lalinský, Tibor, Vanko, Gabriel, Řeháček, Vlastimil, Breza, Juraj, Ecke, Gernot

Journal:

Journal of Electrical Engineering

Year:

2010

Language:

english

File:

PDF, 271 KB

english, 2010

46

Stability of AlGaN/GaN heterostructures after hydrogen plasma treatment

Babchenko, O., Dzuba, J., Lalinský, T., Vojs, M., Vincze, A., Ižák, T., Vanko, G.

Journal:

Applied Surface Science

Year:

2016

Language:

english

File:

PDF, 1.46 MB

english, 2016

47

C–V characterization of SF6 plasma treated AlGaN/GaN heterostructures

J. Osvald, T. Lalinský, G. Vanko, Š. Haščík, A. Vincze

Journal:

Microelectronic Engineering

Year:

2010

Language:

english

File:

PDF, 370 KB

english, 2010

48

AlGaN/GaN Based SAW-HEMT Devices for Chemical Gas Sensors Operating in GHz Range

Ivan Rýger, Gabriel Vanko, Tibor Lalinský, Martin Vallo, Martin Tomáška, Adrian Ritomský

Journal:

Procedia Engineering

Year:

2011

Language:

english

File:

PDF, 548 KB

english, 2011

49

Effect of fluorine interface redistribution on performance of AlGaN/GaN HEMTs

T. Lalinský, G. Vanko, A. Vincze, Š. Haščík, J. Osvald, D. Donoval, M. Tomáška, I. Kostič

Journal:

Microelectronic Engineering

Year:

2011

Language:

english

File:

PDF, 1.00 MB

english, 2011

50

Nb-Ti/Al/Ni/Au based ohmic contacts to AlGaN/GaN

G. Vanko, T. Lalinský, Ž. Mozolová, J. Liday, P. Vogrinčič, A. Vincze, F. Uherek, Š. Haščík, I. Kostič

Journal:

Year:

2007

Language:

english

File:

PDF, 405 KB

english, 2007

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